Metasurface Fabrication by Cryogenic and Bosch Deep Reactive Ion Etching

The fabrication of silicon nanostructures by local gallium implantation and cryogenic deep reactive ion etching.

We show that gallium-ion-implanted silicon serves as an etch mask for fabrication of high aspect ratio nanostructures by cryogenic plasma etching (deep reactive ion etching). The speed of focused ion beam (FIB) patterning is greatly enhanced by the fact that only a thin approx. 30 nm surface layer needs to be modified to create a mask for the etching step. Etch selectivity between gallium-doped...

Cryogenic Deep Reactive Ion Etching of Silicon Micro and Nanostructures

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNOLOGY P.O. BOX 1000, FI-02015 TKK

Mask material effects in cryogenic deep reactive ion etching

Powered by TCPDF (www.tcpdf.org) This material is protected by copyright and other intellectual property rights, and duplication or sale of all or part of any of the repository collections is not permitted, except that material may be duplicated by you for your research use or educational purposes in electronic or print form. You must obtain permission for any other use. Electronic or print cop...

Deep Reactive Ion Etching (DRIE)

Techniques of cryogenic reactive ion etching in silicon for fabrication of sensors

Cryogenic etching of silicon, using an inductively coupled plasma reactive ion etcher ICP-RIE , has extraordinary properties which can lead to unique structures difficult to achieve using other etching methods. In this work, the authors demonstrate the application of ICP-RIE techniques which capitalize on the cryogenic properties to create different sensors geometries: optical, electrical, magn...